• DocumentCode
    1167315
  • Title

    High-Brightness and Ultranarrow-Beam 850-nm GaAs/AlGaAs Photonic Band Crystal Lasers and Single-Mode Arrays

  • Author

    Kettler, Thorsten ; Posilovic, Kristijan ; Karachinsky, Leonid Ya ; Ressel, Peter ; Ginolas, Arnim ; Fricke, Jorg ; Pohl, Udo W. ; Shchukin, Vitaly A. ; Ledentsov, Nikolai N. ; Bimberg, Dieter ; Jönsson, Jan ; Weyers, Markus ; Erbert, Gotz ; Tränkle, Günt

  • Author_Institution
    Inst. of Solid-State Phys., Tech. Univ. of Berlin, Berlin
  • Volume
    15
  • Issue
    3
  • fYear
    2009
  • Firstpage
    901
  • Lastpage
    908
  • Abstract
    Lasers with a waveguide based on a longitudinal photonic band crystal designed for 850 nm emission are investigated. They demonstrate ultranarrow vertical beam divergence of about 7deg full-width at half maximum without using corrective optics. A high internal efficiency of 93% is achieved. Broad-area 50-mum-wide stripe lasers with unpassivated facets show a high total output power of about 20 W in pulsed mode with far-field divergences of 9.5deg and 11.3deg of the slow and fast axis, respectively, equivalent to an ultrahigh brightness of 3×108 Wmiddotcm-2 middotsr-1 and a low aspect ratio of only 1.2. Narrow ridge lasers with 5 mum stripes demonstrate more than 1.5 W maximum output power in continuous-wave operation. Large arrays with up to 256 uncoupled single-mode laser diodes demonstrate low threshold currents of about 70 mA per laser, independent of the number of lasers in the array.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser beams; laser modes; optical materials; optical waveguides; photonic crystals; semiconductor laser arrays; GaAs-AlGaAs; current 70 mA; efficiency 93 percent; low-threshold current; narrow-ridge lasers; optical waveguide; photonic band crystal lasers; pulsed laser mode; single-mode laser diode array; ultranarrow vertical beam divergence; wavelength 850 nm; High brightness; high-power lasers; photonic band crystal; semiconductor laser arrays; semiconductor lasers; single-mode semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Selected Topics in Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    1077-260X
  • Type

    jour

  • DOI
    10.1109/JSTQE.2009.2013179
  • Filename
    4785509