Comment, with reply, on ´Hot-electron hardened Si-gate MOSFET utilizing F implantation´ by Y. Nishioka, et al

For original paper see ibid., vol.10, p.141-3 (Apr. 1989). The commenters point out that the authors of the original paper were not, as they have claimed, the first to show the technique and benefits of implanting and diffusing fluorine. They raise a number of questions about their experimental method and interpretation of results. The authors reply that they did not make the claim attributed to them, and they defined their method and findings at length.<>