• DocumentCode
    1167948
  • Title

    Semiconductor Device-and-Lead Structure, Reprint of U.S. Patent 2,981,877 (Issued April 25, 1961. Filed July 30, 1959)

  • Author

    Noyce, Robert N.

  • Author_Institution
    Fairchild Semiconductor Corporation
  • Volume
    12
  • Issue
    2
  • fYear
    2007
  • Firstpage
    34
  • Lastpage
    40
  • Abstract
    Robert Noyce, who co-founded Fairchild Semiconductor in 1957 with seven others including Jean Hoerni and Gordon E. Moore, and went on to found Intel with Moore in 1968, received Patent No. 2,981,877 in 1961 for the first monolithic integrated circuit made of silicon. He and J.S. Kilby are recognized as co-inventors of the integrated circuit. Noyce received the President´s National Merit of Science Award in 1979 for his work, as did J.S. Kilby in 1969. Read all seven pages of the original patent filing.
  • Keywords
    Contacts; Junctions; Lead; Metals; Silicon; Strips; Transistors;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits Society Newsletter, IEEE
  • Publisher
    ieee
  • ISSN
    1098-4232
  • Type

    jour

  • DOI
    10.1109/N-SSC.2007.4785577
  • Filename
    4785577