• DocumentCode
    1167957
  • Title

    Patents [Method of manufacturing semiconductor devices - US Patent No. 3,025,589]

  • Author

    Hoerni, J.A.

  • Volume
    12
  • Issue
    2
  • fYear
    2007
  • Firstpage
    41
  • Lastpage
    42
  • Abstract
    Two pages of Jean Hoerni\´s 1962 US Patent No. 3,025,589 are reproduced: the first page of diagrams and the first page of claims. J. Hoerni of Fairchild Semiconductor was issued the patent for what is now known as "the planar process" for making npn transistors, with all parts interconnected on one plane by a layer of oxide. His work was crucial to Noyce and Kilby\´s development of the integrated circuit (IC).
  • Keywords
    History; Patents; Transistors;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits Society Newsletter, IEEE
  • Publisher
    ieee
  • ISSN
    1098-4232
  • Type

    jour

  • DOI
    10.1109/N-SSC.2007.4785578
  • Filename
    4785578