DocumentCode
1167957
Title
Patents [Method of manufacturing semiconductor devices - US Patent No. 3,025,589]
Author
Hoerni, J.A.
Volume
12
Issue
2
fYear
2007
Firstpage
41
Lastpage
42
Abstract
Two pages of Jean Hoerni\´s 1962 US Patent No. 3,025,589 are reproduced: the first page of diagrams and the first page of claims. J. Hoerni of Fairchild Semiconductor was issued the patent for what is now known as "the planar process" for making npn transistors, with all parts interconnected on one plane by a layer of oxide. His work was crucial to Noyce and Kilby\´s development of the integrated circuit (IC).
Keywords
History; Patents; Transistors;
fLanguage
English
Journal_Title
Solid-State Circuits Society Newsletter, IEEE
Publisher
ieee
ISSN
1098-4232
Type
jour
DOI
10.1109/N-SSC.2007.4785578
Filename
4785578
Link To Document