• DocumentCode
    1168002
  • Title

    Influence of Laser Pulse Duration in Single Event Upset Testing

  • Author

    Douin, A. ; Pouget, V. ; Darracq, F. ; Lewis, D. ; Fouillat, P. ; Perdu, P.

  • Author_Institution
    CNRS UMR 5818, Bordeaux I Univ.
  • Volume
    53
  • Issue
    4
  • fYear
    2006
  • Firstpage
    1799
  • Lastpage
    1805
  • Abstract
    Device simulations of laser induced SEU in an SRAM cell are performed with pulse durations from 100 fs to 100 mus. SEU threshold energy is notably dependent on the pulse duration. Two regimes are identified and modeled analytically and electrically
  • Keywords
    SPICE; SRAM chips; laser beam applications; PSPICE; SEU threshold energy; SRAM cell; device simulations; laser pulse duration; single event upset testing; Circuit testing; Discrete event simulation; Laboratories; Laser beams; Laser modes; Optical pulse generation; Optical pulses; Random access memory; Semiconductor lasers; Single event upset; Critical charge; device simulation; laser testing; pulse duration; single event upset;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2006.880939
  • Filename
    1684020
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1168002