DocumentCode
1168107
Title
Laser Mapping of SRAM Sensitive Cells: A Way to Obtain Input Parameters for DASIE Calculation Code
Author
Miller, F. ; Buard, N. ; Hubert, G. ; Alestra, S. ; Baudrillard, G. ; Carrière, T. ; Gaillard, R. ; Palau, J.M. ; Saigné, F. ; Fouillat, P.
Author_Institution
Corporate Res. Center, Eur. Aeronaut. Defence & Space Co.
Volume
53
Issue
4
fYear
2006
Firstpage
1863
Lastpage
1870
Abstract
This paper presents a new way of investigation using the laser method. It is based on laser threshold mappings of electronic devices. The main idea is to use these mappings in order to extract physical parameters, for instance sizes and shapes of the different sensitive areas of a component. These parameters can be used as input parameters for analytical or Monte Carlo calculation codes in order to predict the behavior of sensitive components towards radiations
Keywords
Monte Carlo methods; SRAM chips; laser beam effects; DASIE calculation code; Monte Carlo calculation code; SRAM sensitive cell; electronic device; laser mapping; static random-access memory; Electron accelerators; Electronic components; Ion accelerators; Laser theory; Monte Carlo methods; National electric code; Radiation effects; Random access memory; Shape; Testing; Calculation codes; SEU; SRAM; laser mappings;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2006.880938
Filename
1684030
Link To Document