DocumentCode
1168188
Title
Inactivity Windows in Irradiated CMOS Analog Switches
Author
Franco, F.J. ; Zong, Y. ; Agapito, J.A.
Author_Institution
Univ. Complutense de Madrid
Volume
53
Issue
4
fYear
2006
Firstpage
1923
Lastpage
1930
Abstract
Radiation tests have shown the existence of inactivity windows in analog switches. It means that the devices lose their ability to switch between ON and OFF states if the total radiation dose is placed between two characteristic values. Once the total radiation dose goes beyond the top value of the window, the switching ability reappears. A physical mechanism based on the evolution of the threshold voltage of irradiated NMOS transistors is proposed in this paper. Finally, consequences of inactivity windows in the conception of radiation tests are discussed
Keywords
CMOS analogue integrated circuits; field effect transistor switches; radiation effects; semiconductor device testing; CMOS analog switch; NMOS transistor irradiation; inactivity windows; on-off state; physical mechanism; radiation testing; total ionizing dose; Electron accelerators; Instruments; Ion accelerators; Ionizing radiation; Large Hadron Collider; Neutrons; Particle beams; Superconducting magnets; Switches; Testing; Analog switches; complementary metal–oxide semiconductor (CMOS) devices; total ionizing dose (TID);
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2006.880474
Filename
1684039
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