Proton Irradiation of Silicon Schottky Barrier Power Diodes

Author

Harris, Richard D. ; Frasca, Albert J.

Author_Institution

Analex Corp., Cleveland, OH

Volume

53

Issue

4

fYear

2006

Firstpage

1995

Lastpage

2003

Abstract

Commercial silicon Schottky barrier power diodes have been subjected to 203 MeV proton irradiation and the effects of the resultant displacement damage on the I-V characteristics have been observed. The diodes show excellent resistance to radiation damage. Changes in forward and reverse bias I-V characteristics are reported for irradiated commercial Schottky barrier diodes at fluences up to 4times10¹⁴ p/cm². Small changes are seen in the reverse bias I-V characteristics with increasing irradiation fluence. In forward bias, the series resistance is observed to increase as the fluence increases. The changes in series resistance are interpreted as being due to changes in the effective dopant density due to carrier removal by the defects produced

Keywords

Schottky diodes; elemental semiconductors; power semiconductor diodes; proton effects; semiconductor doping; silicon; I-V characteristics; Si; defect production; displacement damage; dopant density; forward-reverse bias characteristics; proton irradiation; silicon Schottky barrier power diode; Instruments; NASA; P-n junctions; Packaging; Particle beams; Protons; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Displacement damage; I-V characteristics; Schottky diode; proton irradiation; silicon;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2006.880934

Filename

1684049