PtRh resistors for Si compatible low-T/sub c/ Josephson technology

Author

Stawiasz, K.G. ; Ketchen, M.B. ; Kleinsasser, A.W.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

4

Issue

3

fYear

1994

Firstpage

177

Lastpage

179

Abstract

A PtRh resistor has been developed as an integral part of an advanced planarized low-T/sub c/ Josephson technology that is compatible with Si integrated circuit processing. Electron-beam evaporated from a single source, the PtRh films have a sheet resistance well controlled in the range of 3-20 /spl Omega//square that is independent of temperature from 4.2 K down to at least 10 mK. The contact resistivity between PtRh, with a sheet resistance of 5 /spl Omega//square and Nb interconnects is typically 0.7 /spl Omega//spl middot//spl mu/m.<>

Keywords

Josephson effect; electron beam deposition; platinum alloys; rhenium alloys; superconducting integrated circuits; thin film resistors; vapour deposited coatings; 4.2 K; Nb; Nb interconnects; PtRh; PtRh films; PtRh resistors; Si compatible Josephson technology; contact resistivity; electron-beam evaporation; planarized low-T/sub c/ Josephson technology; sheet resistance; superconducting IC; Adhesives; Conductivity; Contact resistance; Fabrication; Platinum alloys; Resistors; Superconducting films; Superconducting materials; Superconducting transition temperature; Temperature distribution;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.317835

Filename

317835