Design and realization of InGaAs/GaAs strained layer DFB quantum well lasers

Author

Hansmann, Stefan ; Burkhard, Herbert ; Dahlhof, Kornelia ; Schlapp, Winfried ; Losch, R. ; Nickel, Heinrich ; Hillmer, Hartmut

Author_Institution

Deutsche Bundespost-Telekom, Forschungsinst. Beim FTZ, Darmstadt, Germany

Volume

10

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

620

Lastpage

625

Abstract

Optical waveguiding in an InGaAs/GaAs strained-layer distributed feedback (DFB) quantum well laser is investigated using the one-dimensional shooting method presented. The numerical approach is used to optimize the waveguide geometry and to calculate the corrugation period and the coupling factor for the integrated Bragg grating. The quantum well DFB structure designed according to the numerical calculations for an emission wavelength of 982 nm was realized for the first time entirely by molecular beam epitaxy (MBE) growth. Thus, side-mode suppression ratios of 49 dB, threshold currents of 7 mA and quantum efficiencies of 0.4 mW/mA were achieved

Keywords

distributed feedback lasers; gallium arsenide; indium compounds; integrated optics; optical waveguide theory; semiconductor junction lasers; 7 mA; 982 nm; III-V semiconductor; InGaAs-GaAs; InGaAs/GaAs strained layer DFB quantum well lasers; corrugation period; coupling factor; design; emission wavelength; integrated Bragg grating; molecular beam epitaxy; numerical approach; one-dimensional shooting method; optical waveguiding; quantum efficiencies; side-mode suppression ratios; threshold currents; waveguide geometry; Distributed feedback devices; Gallium arsenide; Geometrical optics; Indium gallium arsenide; Laser feedback; Molecular beam epitaxial growth; Optical feedback; Optical waveguides; Quantum well lasers; Waveguide lasers;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.136097

Filename

136097