DocumentCode
1169043
Title
Electron mobility enhancement using ultrathin pure Ge on Si substrate
Author
Ching, Chia ; Cho, Byung Jin ; Gao, F. ; Lee, S.J. ; Lee, M.H. ; Yu, C.-Y. ; Liu, C.W. ; Tang, L.J. ; Lee, T.W.
Author_Institution
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Volume
26
Issue
10
fYear
2005
Firstpage
761
Lastpage
763
Abstract
We demonstrate enhancement of electron mobility in nMOSFET using an ultrathin pure Ge crystal channel layer directly grown on a bulk Si wafer. A thin Si crystal layer is also grown on top of a Ge crystal channel layer as a capping layer. Using the Si/Ge/Si structure, a maximum 2.2X enhancement in electron mobility is achieved while good gate dielectric properties and junction qualities of bulk Si devices are maintained.
Keywords
MOSFET; crystal properties; dielectric properties; electron mobility; elemental semiconductors; germanium; silicon; MOSFET; Si wafer; Si-Ge-Si; capping layer; electron mobility enhancement; gate dielectric properties; junction qualities; thin Si crystal layer; ultrathin Ge crystal channel layer; CMOS process; Charge carrier processes; Degradation; Dielectric devices; Dielectric substrates; Electron mobility; MOSFET circuits; Mechanical factors; Raw materials; Silicon; Effective electron mobility; Ge; high-;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2005.855420
Filename
1510752
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