Physical insights regarding design and performance of independent-gate FinFETs

Author

Zhang, Weimin ; Fossum, Jerry G. ; Mathew, Leo ; Du, Yang

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA

Volume

52

Issue

10

fYear

2005

Firstpage

2198

Lastpage

2206

Abstract

Important physical insights regarding the design and performance of independent-gate FinFETs, e.g., the MIGFET , are gained from measured data and predictions from our process/physics-based double-gate (DG) MOSFET model (UFDG) in Spice3. Inversion charge-centroid shifting, modulated by gate biases as well as by quantum-confinement and short-channel effects, underlies the sensitivity of the MIGFET (front-gate) threshold voltage to the back-gate bias. MIGFET design and operation-mode options are examined for optimizing circuit applications. Further, novel design of a single-device RF mixer and a double-balanced counterpart using MIGFETs is studied with UFDG/Spice3. Reasonably good MIGFET mixers, with regard to conversion gain and linearity with small-size/low-voltage/low-power requirements, can be achieved with optimal biases on the two gates and good design of the MIGFET structure.

Keywords

SPICE; circuit optimisation; insulated gate field effect transistors; low-power electronics; mixers (circuits); semiconductor device models; MIGFET mixers; SPICE; back-gate bias; circuit optimization; double-gate FinFET; insulated gate field effect transistors; inversion charge-centroid shifting; low-power electronics; multiple independent-gate FinFET; single-device RF mixer; threshold voltage; Design optimization; Fabrication; FinFETs; Gain measurement; Linearity; MOSFET circuits; Predictive models; Radio frequency; Spline; Threshold voltage; Double-gate (DG) FinFET; RF mixer; multiple independent-gate FinFET (MIGFET); threshold-voltage control;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.856184

Filename

1510909