Nitride-based light-emitting diodes with p-AlInGaN surface layers

Author

Kuo, C.H. ; Lin, C.C. ; Chang, S.J. ; Hsu, Y.P. ; Tsai, J.M. ; Lai, W.C. ; Wang, P.T.

Author_Institution

Inst. of Opt. Sci., Nat. Central Univ., Chung-li, Taiwan

Volume

52

Issue

10

fYear

2005

Firstpage

2346

Lastpage

2349

Abstract

We have prepared bulk p-AlInGaN layers and light-emitting diodes (LEDs) with p-AlInGaN surface layers by metal-organic chemical vapor deposition. By properly control the TMAl and TMIn flow rates, we could match the lattice constant of p-AlInGaN to that of GaN. It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; indium compounds; lattice constants; light emitting diodes; surface roughness; wide band gap semiconductors; AlInGaN; InGaN-GaN; LED; TMAI flow rate; TMIn flow rate; V-shap pits; hexagonal pits; lattice constant; light-emitting diode; metal-organic chemical vapor deposition; p-AlInGaN surface layer; Chemical vapor deposition; Gallium nitride; Light emitting diodes; Optical films; Optical refraction; Optical scattering; Refractive index; Rough surfaces; Surface morphology; Surface roughness; InGaN/GaN; V-shap pits; light-emitting diode (LED); p-AlInGaN;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.856817

Filename

1510931