• DocumentCode
    1171362
  • Title

    Intensity modulation at 1.06 mu m wavelength using ultranarrow GaInAsP quantum wells

  • Author

    Zucker, J.E. ; Bar-Joseph, I. ; Divino, M.D. ; Chemta, D.S.

  • Author_Institution
    AT&T Bell Labs., Holmdel, NJ, USA
  • Volume
    25
  • Issue
    15
  • fYear
    1989
  • fDate
    7/20/1989 12:00:00 AM
  • Firstpage
    973
  • Lastpage
    975
  • Abstract
    Demonstrates large electroabsorption at 1.06 mu m associated with field-induced tunnelling in ultranarrow GaInAsP quantum wells.
  • Keywords
    III-V semiconductors; electro-optical devices; gallium arsenide; indium compounds; optical modulation; semiconductor quantum wells; tunnelling; 1.06 micron; GaInAsP; electroabsorption; field-induced tunnelling; intensity modulation; quantum wells;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890651
  • Filename
    31975
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1171362