• DocumentCode
    1171748
  • Title

    Effects of neutron irradiation on current gain and noise in silicon avalanche photodiodes

  • Author

    Gedam, S.G. ; Singh, A. ; Banerjee, P.K. ; Mitra, S.S.

  • Author_Institution
    Dept. of Electr. Eng., Rhode Island Univ., Kingston, RI, USA
  • Volume
    38
  • Issue
    5
  • fYear
    1991
  • fDate
    10/1/1991 12:00:00 AM
  • Firstpage
    1013
  • Lastpage
    1017
  • Abstract
    The authors report on an experimental study of the effects of fission neutron irradiation on a silicon avalanche photodiode, which is a photodetector that is often used as the front end of a receiver in a fiber-optic link. Measurements indicate that there is a degradation in the current gain and a decrease in the multiplication noise after irradiation. Some recovery is found to occur after three days. The device, however, continues to behave linearly after irradiation
  • Keywords
    amplification; avalanche photodiodes; electron device noise; neutron effects; Si avalanche photodiodes; current gain; multiplication noise; neutron irradiation; Avalanche photodiodes; Degradation; Neutrons; Optical fiber communication; Optical fibers; P-i-n diodes; PIN photodiodes; Photodetectors; Semiconductor device noise; Silicon;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.108362
  • Filename
    108362