• DocumentCode
    1172168
  • Title

    Novel FRESURF LDMOSFET devices with improved BVdss-Rdson

  • Author

    Khemka, Vishnu ; Parthasarathy, Vijay ; Zhu, Ronghua ; Bose, Amitava

  • Author_Institution
    SMARTMOS Technol. Center, Freescale Semicond. Inc., Tempe, AZ, USA
  • Volume
    25
  • Issue
    12
  • fYear
    2004
  • Firstpage
    804
  • Lastpage
    806
  • Abstract
    In this letter, we propose and demonstrate a novel device based on a floating reduced surface field (FRESURF) concept which allows the realization of significantly higher breakdown voltage in a thin epitaxy-based power IC technology. The newly proposed device with the floating buried layer pulled back from the source side is able to realize an enhanced breakdown voltage (BVdss) without degrading the specific on-resistance (RdsonA). BVdss-RdsonA values like 47 V-0.28 mΩ·cm2 or 93 V-0.82 mΩ·cm2 have been realized with a conventional power IC technology without any added process complexity.
  • Keywords
    MOSFET; power integrated circuits; voltage control; 47 V; 93 V; BVdss-Rdson; FRESURF device; LDMOSFET device; breakdown voltage; floating buried layer; floating reduced surface field; smart power; specific on-resistance; thin epitaxy-based power IC technology; Breakdown voltage; Decision support systems; Degradation; Electric potential; Epitaxial growth; FETs; Manufacturing industries; Physics; Power integrated circuits; Substrates; 65; Breakdown voltage; FRESURF; LDMOS; LDMOSFET; RESURF; floating reduced surface field; high-side; punchthrough; reduced surface field; smart power; specific on-resistance;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2004.838313
  • Filename
    1362781
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1172168