• DocumentCode
    1172373
  • Title

    A compact and low-phase-noise Ka-band pHEMT-based VCO

  • Author

    Piernas, Belinda ; Nishikawa, Kenjiro ; Nakagawa, Tadao ; Araki, Katsuhiko

  • Author_Institution
    NTT Network Innovation Labs., NTT Corp., Kanagawa, Japan
  • Volume
    51
  • Issue
    3
  • fYear
    2003
  • fDate
    3/1/2003 12:00:00 AM
  • Firstpage
    778
  • Lastpage
    783
  • Abstract
    A low phase-noise Ka-band monolithic voltage-controlled oscillator (VCO) designed using the negative resistance concept is reported. A circuit fabricated using the three-dimensional monolithic microwave integrated circuit technology exhibits a high integration level; its size is a record at just 0.5 mm2. On-wafer measurements demonstrate a low phase noise of -102 dBc/Hz at a 1-MHz offset. The VCO delivers an output power of 11.8 dBm at the center frequency of 28.3 GHz. The frequency tuning range is more than 3.8 GHz. Dependence of the circuit performance on the bias conditions is also reported and suggests that an optimum phase-noise characteristic can be achieved when biasing the transistor to optimize its transconductance and noise figure.
  • Keywords
    HEMT integrated circuits; MMIC oscillators; circuit tuning; field effect MMIC; integrated circuit design; integrated circuit noise; phase noise; voltage-controlled oscillators; 28.3 GHz; 3D MMIC technology; HEMT MMIC; Ka-band VCO; bias conditions; broadband operation; frequency tuning range; low phase-noise VCO; monolithic microwave integrated circuit; monolithic voltage-controlled oscillator; negative resistance concept; noise figure; optimum phase noise characteristic; pHEMT-based VCO; pseudomorphic HEMT; transconductance; Circuit optimization; Electrical resistance measurement; Frequency; Integrated circuit measurements; Integrated circuit technology; Noise measurement; Phase measurement; Phase noise; Power generation; Voltage-controlled oscillators;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2003.808584
  • Filename
    1191729