• DocumentCode
    1172477
  • Title

    Modeling process latitude in UV projection lithography

  • Author

    Barouch, Eytan ; Hollerbach, Uwe ; Orszag, Steven A. ; Bradie, Brian ; Peckerar, Martin

  • Author_Institution
    Appl. & Comput. Math., Princeton Univ., NJ, USA
  • Volume
    12
  • Issue
    10
  • fYear
    1991
  • Firstpage
    513
  • Lastpage
    514
  • Abstract
    The degree to which critical performance parameters are stable against small variations in process parameters is called process latitude. Advanced computer models of UV microlithography are used to study the impact of the notching phenomenon (exposure enhancement near steps in the exposure plane) on process latitude. It is shown that notching effects give rise to a rapid degradation of resist development process latitude.<>
  • Keywords
    photolithography; UV microlithography; UV projection lithography; computer models; exposure enhancement near steps; notching effects; notching phenomenon; process latitude modelling; resist development process latitude; Degradation; Diffraction; Lithography; Manufacturing processes; Mathematics; Maxwell equations; Optical reflection; Physics computing; Resists; Semiconductor devices;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.119174
  • Filename
    119174
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1172477