An ultrawideband CMOS low-noise amplifier for 3.1-10.6-GHz wireless receivers

Author

Bevilacqua, Andrea ; Niknejad, Ali M.

Author_Institution

Dipt. di Ingegneria dell´´Informazione, Univ. di Padova, Italy

Volume

39

Issue

12

fYear

2004

Firstpage

2259

Lastpage

2268

Abstract

An ultrawideband 3.1-10.6-GHz low-noise amplifier employing an input three-section band-pass Chebyshev filter is presented. Fabricated in a 0.18-μm CMOS process, the IC prototype achieves a power gain of 9.3 dB with an input match of -10 dB over the band, a minimum noise figure of 4 dB, and an IIP3 of -6.7 dBm while consuming 9 mW.

Keywords

CMOS integrated circuits; Chebyshev filters; band-pass filters; low-power electronics; power amplifiers; radiofrequency integrated circuits; ultra wideband communication; 0.18 micron; 3.1 to 10.6 GHz; 4 dB; 9 mW; 9.3 dB; Chebyshev filter; IIP3; RFIC; device fabrication; input match; integrated circuit prototype; low power; low-noise amplifier; minimum noise figure; power gain; ultrawideband CMOS; wireless receivers; Band pass filters; CMOS integrated circuits; CMOS process; Chebyshev approximation; Gain; Impedance matching; Integrated circuit noise; Low-noise amplifiers; Prototypes; Ultra wideband technology; 65; CMOS; Chebyshev filter; LNA; RFIC; UWB; low power; low-noise amplifier; ultrawideband;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2004.836338

Filename

1362834