A single-piece C/sub infinity /-continuous MOSFET model including subthreshold conduction

A simple yet powerful technique that transforms regional compact (algebraic) MOSFET models into single-piece C/sub infinity /-continuous models is introduced. The technique significantly improves MOSFET models by removing kinks and glitches at the boundaries between the subthreshold, triode, and saturation regions of operation. In addition, the technique adds subthreshold conduction modeling to models that lack such a capability. The authors show the technique by extending a simple MOSFET model, which is three piece and does not model subthreshold conduction, to become a single-piece model that includes subthreshold conduction.<>