DocumentCode
1173607
Title
Effect of hot-carrier injection on n- and pMOSFET gate oxide integrity
Author
Rosenbaum, Elyse ; Rofan, Reza ; Hu, Chenming
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Volume
12
Issue
11
fYear
1991
Firstpage
599
Lastpage
601
Abstract
N- and pMOSFETs with 9-nm gate oxide are compared. Injected hot holes are about 100 times as effective as electrons at 10.5 MV/cm of oxide field in causing oxide breakdown. Gate current in nMOSFETs under stress conditions is due to holes and electrons. The gate current in pMOSFETs is about 1000 times as large, but solely due to electrons. PMOSFETs can tolerate 1000 times more charge injection than nMOSFETs, but not more drain current stress.<>
Keywords
hot carriers; insulated gate field effect transistors; reliability; 9 nm; charge injection; drain current stress; gate current; gate oxide integrity; hot electron injection; hot electrons; hot hole injection; hot holes; hot-carrier injection; nMOSFETs; oxide breakdown; oxide field; pMOSFETs; stress conditions; Current measurement; Design for quality; Electric breakdown; Hot carrier injection; Hot carriers; MOS devices; MOSFET circuits; Stress; Tunneling; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.119210
Filename
119210
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