Parameter sensitivity of narrow-channel MOSFET´s

Author

Li, E. Herbert ; Ng, H.C.

Author_Institution

Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK

Volume

12

Issue

11

fYear

1991

Firstpage

608

Lastpage

610

Abstract

An analytical method is used to examine the threshold voltage sensitivity due to various device parameter fluctuations in the narrow-channel MOSFETs. The analysis is based on a narrow-channel model with a semirecessed field-isolation structure and a short-channel modification. The results show that while the dopant-concentration and fixed-oxide charges fluctuation increases sensitivity, the back-gate bias fluctuation decreases sensitivity as the channel width is reduced. The present strategy is simple and is therefore ideal for miniaturized device processing simulation.<>

Keywords

insulated gate field effect transistors; semiconductor device models; ULSI; VLSI; analytical method; back-gate bias fluctuation; channel width; device parameter fluctuations; dopant-concentration; fixed-oxide charges fluctuation; miniaturized device processing simulation; narrow-channel MOSFETs; narrow-channel model; parameter sensitivity; semirecessed field-isolation structure; short-channel modification; threshold voltage sensitivity; Analytical models; Circuit simulation; Doping; Fabrication; Fluctuations; MOSFET circuits; Performance analysis; Semiconductor process modeling; Sensitivity analysis; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.119213

Filename

119213