1/f noise characterization of base current and emitter interfacial oxide breakup in n-p-n polyemitter bipolar transistors

Author

Quon, D.S. ; Sonek, G.J. ; Li, G.P.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Irvine, CA, USA

Volume

15

Issue

10

fYear

1994

Firstpage

430

Lastpage

432

Abstract

We propose using base 1/f noise to characterize the distribution of diffusion and tunneling components of base-current (I/sub b/) at the emitter poly/monosilicon interface in n-p-n polyemitter transistors. A noise model is constructed to interpret the I/sub b/ 1/f noise (S/sub iEB/) dependence on these combined currents. Measured I/sub b/ dependences of S/sub iEB/ increase progressively from I/sub b//sup 1.2/ to I/sub b//sup 2.0/ for transistors having emitter structures concomitant with increasing current gains and series emitter resistances ranging between 115-1800 and 7-33/spl Omega/, respectively. This is indicative of tunneling components in I/sub b//sup 2.0/ that increase with higher interfacial oxide continuity, and persist in epitaxially realigned emitters.<>

Keywords

bipolar transistors; diffusion in solids; electric noise measurement; random noise; semiconductor device models; semiconductor device noise; tunnelling; 1/f noise characterization; 7 to 33 ohm; Si; base current; current gains; diffusion components; emitter interfacial oxide breakup; epitaxially realigned emitters; interfacial oxide continuity; n-p-n polyemitter bipolar transistors; noise model; series emitter resistances; tunneling components; Additive noise; Bipolar transistors; Circuit noise; Current measurement; Electrical resistance measurement; Frequency; Gain measurement; Integrated circuit noise; Semiconductor process modeling; Tunneling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.320991

Filename

320991