Schottky barrier heights of n-type and p-type Al/sub 0.48/In/sub 0.52/As

Author

Sadwick, Larry P. ; Kim, C.W. ; Tan, Kin L. ; Streit, Dwight C.

Author_Institution

Dept. of Electr. Eng., Utah Univ., Salt Lake City, UT, USA

Volume

12

Issue

11

fYear

1991

Firstpage

626

Lastpage

628

Abstract

The authors report electrical measurements on four different metal contacts which formed Schottky barriers to lightly doped complementary n- and p-type Al/sub 0.48/In/sub 0.52/As epitaxial material grown by molecular beam epitaxy on semi-insulating InP substrates. The Schottky contact metals studied were Au, Al, Pt, and tri-layer Ti/Pt/Au. The Schottky barrier heights varied from 0.560 eV for Al on n-type AlInAs to 0.905 eV for Al on p-type AlInAs, with intermediate values for the other metals studied. The sum of n- and p-type Schottky barrier heights for each metal contact ranged from 1.440 to 1.465 eV, in good agreement with the accepted Al/sub 0.48/In/sub 0.52/As bandgap value of 1.45 eV.<>

Keywords

III-V semiconductors; Schottky effect; aluminium; aluminium compounds; gold; indium compounds; platinum; semiconductor epitaxial layers; semiconductor-metal boundaries; 0.56 to 1.465 eV; Al-AlInAs; Al/sub 0.48/In/sub 0.52/As; Al/sub 0.48/In/sub 0.52/As-InP; Au-AlInAs; Pt-AlInAs; Schottky barrier heights; Schottky barriers; Schottky contact metals; TiPtAu-AlInAs; bandgap value; electrical measurements; metal contacts; molecular beam epitaxy; n-type AlInAs; p-type AlInAs; semi-insulating InP substrates; Contacts; Electric variables measurement; Gold; Indium phosphide; Inorganic materials; Molecular beam epitaxial growth; Photonic band gap; Schottky barriers; Substrates; Voltage measurement;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.119219

Filename

119219