• DocumentCode
    1174261
  • Title

    1.5 μm laser on GaAs with GaInNAsSb quinary quantum well

  • Author

    Li, L.H. ; Sallet, V. ; Patriarche, G. ; Largeau, L. ; Bouchoule, S. ; Merghem, K. ; Travers, L. ; Harmand, J.C.

  • Author_Institution
    Lab. de Photonique et de Nanostructures, CNRS, Marcoussis, France
  • Volume
    39
  • Issue
    6
  • fYear
    2003
  • fDate
    3/20/2003 12:00:00 AM
  • Firstpage
    519
  • Lastpage
    520
  • Abstract
    A 1.50 μm broad area edge emitting laser is demonstrated with a structure grown by molecular beam epitaxy on a GaAs substrate. The active region is based on a single GaInNAsSb quantum well. The threshold current density is 3.5 kA/cm2. Output power over 22 mW per facet is achieved.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; molecular beam epitaxial growth; quantum well lasers; 1.5 micron; 22 mW; GaAs substrate; GaInNAsSb quinary quantum well; broad area laser; edge emitting laser; molecular beam epitaxy; semiconductor laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030367
  • Filename
    1192205
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1174261