• DocumentCode
    1174292
  • Title

    High-power surface emitting semiconductor laser with extended vertical compound cavity

  • Author

    McInerney, J.G. ; Mooradian, A. ; Lewis, A. ; Shchegrov, A.V. ; Trzelecka, E. M S ; Lee, D. ; Watson, J.P. ; Liebman, M. ; Carey, G.P. ; Cantos, B.D. ; Hitchens, W.R. ; Heald, D.

  • Author_Institution
    Novalux Inc., Sunnyvale, CA, USA
  • Volume
    39
  • Issue
    6
  • fYear
    2003
  • fDate
    3/20/2003 12:00:00 AM
  • Firstpage
    523
  • Lastpage
    525
  • Abstract
    Novel, electrically pumped, vertical compound cavity InGaAs lasers emitting at 980 nm are described. These have generated 1 W continuous-wave multimode and 0.5 W continuous-wave in a fundamental TEM00 mode and single frequency, with 90% coupling efficiency into a singlemode fibre.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; semiconductor lasers; surface emitting lasers; 0.5 W; 1 W; 90 percent; 980 nm; InGaAs; InGaAs lasers; electrically pumped lasers; extended vertical compound cavity; high-power SEL; surface emitting semiconductor laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030300
  • Filename
    1192208
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1174292