• DocumentCode
    1174582
  • Title

    AlGaN/GaN HFET devices on SiC grown by ammonia-MBE with high fT and fMAX

  • Author

    Bardwell, J.A. ; Liu, Y. ; Tang, H. ; Webb, J.B. ; Rolfe, S.J. ; Lapointe, J.

  • Author_Institution
    Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
  • Volume
    39
  • Issue
    6
  • fYear
    2003
  • fDate
    3/20/2003 12:00:00 AM
  • Firstpage
    564
  • Lastpage
    566
  • Abstract
    AlGaN/GaN HFET layers were grown by ammonia-MBE on SiC substrates. Fabricated devices showed excellent characteristics: a maximum drain current density > 1.25 A/mm, maximum transconductance of 250 mS/mm, fT of 103 GHz and fMAX of 170 GHz were measured for devices with 0.13 μm gate length. These are the highest ever reported for material grown by ammonia-MBE.
  • Keywords
    III-V semiconductors; aluminium compounds; ammonia; gallium compounds; microwave field effect transistors; microwave power transistors; molecular beam epitaxial growth; power field effect transistors; silicon compounds; wide band gap semiconductors; 0.13 micron; 103 GHz; 170 GHz; 250 mS/mm; AlGaN-GaN; AlGaN/GaN HFET devices; SiC; SiC substrates; ammonia-MBE growth; drain current density; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030354
  • Filename
    1192235
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1174582