Use of Ukrainian semiconductor dosimeters in a CERN particle accelerator field

Author

Rosenfeld, A. ; Khivrich, V. ; Kuts, V. ; Tavlet, M. ; Malfante, L. ; Munoz-Ferrada, C.

Author_Institution

Inst. for Nucl. Res., Kiev, Ukraine

Volume

41

Issue

4

fYear

1994

fDate

8/1/1994 12:00:00 AM

Firstpage

1009

Lastpage

1013

Abstract

The results of the application of p-i-n and MOS dosimeters in the PS-ACOL Irradiation Facility (PSAIF) at CERN for separate measurements of gamma dose and fast neutron fluences are presented. The mixed gamma-neutron field was due to 26 GeV protons hitting an iridium target, yielding an instantaneous dose rate of approximately 3.10⁵ Gy/s. Good agreement with calibration curves is found for MOS in a ⁶⁰Co gamma source as well as for p-i-n sensors in a neutron reactor spectrum with mean energy of 1 MeV. Experimental results from PSAIF are presented and pulse current injection annealing of p-i-n diodes is considered. Such sensors are very convenient for on-line separated total dose measurements in mixed gamma-neutron radiation fields, as well as for radiation hardness testing of electronics. Components on irradiation facilities, and could be installed near the detector area of the LHC

Keywords

calibration; dosimeters; gamma-ray detection and measurement; metal-insulator-semiconductor devices; neutron detection and measurement; p-i-n diodes; semiconductor counters; ⁶⁰Co gamma rays; MOS dosimeters; PS-ACOL Irradiation Facility; calibration; fast neutron fluence; gamma dose; mixed gamma-neutron radiation fields; p-i-n dosimeters; radiation hardness; semiconductor dosimeters; Annealing; Calibration; Electronic equipment testing; Gamma ray detectors; Gas detectors; Inductors; Neutrons; P-i-n diodes; PIN photodiodes; Protons;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.322849

Filename

322849