Monte Carlo approach to transient analysis of HBTs with different collector designs

Author

Hu, Juntao ; Tomizawa, Kazutaka ; Pavlidis, Dimitris

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

10

Issue

2

fYear

1989

Firstpage

55

Lastpage

57

Abstract

The transient analysis of heterojunction bipolar transistors (HBTs) using the Monte Carlo technique is presented. Three HBT structures with conventional (A), inverted field (B), and undoped (C) collectors were simulated. The transient behavior of the collector currents show that the time constants are 1.466, 0.722, and 0.863 ps at a collector current of 3.5*10/sup 4/ A/cm/sup 2/ for devices A, B and C, respectively. This suggests that the inverted field structure may be the best choice for high-speed applications.<>

Keywords

Monte Carlo methods; heterojunction bipolar transistors; semiconductor device models; HBTs; Monte Carlo technique; collector currents; collector designs; heterojunction bipolar transistors; high-speed applications; inverted field structure; time constants; transient analysis; Bipolar transistors; Charge carrier processes; Electron emission; Heterojunction bipolar transistors; Microwave devices; Monte Carlo methods; Particle scattering; Plasmons; Thyristors; Transient analysis;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.32427

Filename

32427