• DocumentCode
    1179065
  • Title

    Prediction of magnetic flux-controlled gate voltage in superconducting field-effect transistors

  • Author

    Glasser, Lance A.

  • Author_Institution
    Hitachi Ltd., Tokyo, Japan
  • Volume
    10
  • Issue
    2
  • fYear
    1989
  • Firstpage
    82
  • Lastpage
    84
  • Abstract
    The undirectional model to the superconducting field-effect transistor (SFET) is shown to be thermodynamically unsound. A gate voltage which is controlled by the magnetic flux difference in a Josephson weak link is predicted by energy arguments. For a passive SFET model to be consistent with recent experimental observations of a charge-controlled critical current, a back-reaction from the DC drain-to-source flux (phase difference) to the DC gate voltage is required. As this effect is important in large devices and occurs at V/sub DS/=0, it does not appear to be directly related to charge-space energy bands or quasiparticle interference.<>
  • Keywords
    field effect transistors; semiconductor device models; superconducting junction devices; DC drain-to-source flux; Josephson weak link; charge-controlled critical current; energy arguments; magnetic flux-controlled gate voltage; passive SFET model; phase difference; superconducting field-effect transistors; undirectional model; Critical current; FETs; Integrated circuit measurements; Laboratories; MOSFETs; Magnetic flux; Maxwell equations; Superconducting magnets; Voltage control;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.32436
  • Filename
    32436