Progress in research into mixed group-V nitride alloys

Mixed group-V nitride alloys, also known as III-N-V alloys, such as GaNP, GaNAs and GaInNAs, are novel semiconductor materials that were not developed until the 1990s. Their unusual physical properties, such as huge degrees of bandgap bowing, make them applicable as the bases of devices providing superior performance. These materials have been applied in laser diodes, solar cells, and heterojunction bipolar transistors. The authors present a historical review of research into III-N-V alloys from its beginnings, with a particular focus on the application of the materials to optoelectronics.