• DocumentCode
    1179784
  • Title

    Optical spectroscopy of 1.3 μm (GaIn)(NAs)/GaAs lasers

  • Author

    Gerhardt, N. ; Hofmann, M.R. ; Ruhle, W.W.

  • Author_Institution
    AG Werkstoffe der Mikroelektron., Ruhr-Univ., Bochum, Germany
  • Volume
    150
  • Issue
    1
  • fYear
    2003
  • fDate
    2/1/2003 12:00:00 AM
  • Firstpage
    45
  • Lastpage
    48
  • Abstract
    The optical gain of MBE-grown and MOVPE-grown (GaIn)(NAs)/GaAs lasers and samples is investigated with different methods. A quantitative analysis of the experimental gain of commercial MBE-grown structures on the basis of a microscopic theory reveals that the gain is due to inhomogeneously broadened band-band transitions. In contrast, the authors´ analysis of an MOVPE-grown sample indicates that the optical gain is influenced by the locally varying environment of the nitrogen in the active region resulting in a strong shoulder in the gain spectra. The results demonstrate that the optical properties of (GaIn)(NAs)/GaAs strongly depend on the growth and preparation processes of the device under study.
  • Keywords
    III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; infrared spectra; laser transitions; molecular beam epitaxial growth; photoluminescence; quantum well lasers; semiconductor quantum wells; spectral line broadening; vapour phase epitaxial growth; (GaIn)(NAs)-GaAs; (GaIn)(NAs)/GaAs QW lasers; 1.3 micron; MBE-grown; MOVPE-grown; active region; gain spectra; inhomogeneously broadened band-band transitions; microscopic theory; optical gain; optical properties; optical spectroscopy;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings -
  • Publisher
    iet
  • ISSN
    1350-2433
  • Type

    jour

  • DOI
    10.1049/ip-opt:20030035
  • Filename
    1193692