Comparison between dilute nitrides grown on {111} and [100] GaAs substrates: N incorporation and quantum well optical properties

Author

Blanc, S. ; Arnoult, A. ; Carrère, H. ; Bedel, E. ; Lacoste, G. ; Fontaine, C. ; Cabié, M. ; Ponchet, A. ; Roche, A.

Author_Institution

Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France

Volume

150

Issue

1

fYear

2003

fDate

2/1/2003 12:00:00 AM

Firstpage

64

Lastpage

67

Abstract

Molecular beam epitaxy of GaAsN/GaAs and GaInAsN/GaAs structures on {111} oriented substrates has been studied. Ga(In)AsN/GaAs thick layers and quantum wells have been grown on [111]A and [111]B GaAs substrates. Nitrogen incorporation has been found to depend on substrate orientation and growth rate. The most promising orientation appears to be the [111]A orientation for GaAsN quantum wells and emission wavelengths up to 1.5 μm have been obtained. For [111]B, a broad emission is systematically observed indicating the presence of defects originating from N incorporation. For [111]A GaInAsN/GaAs quantum wells, the addition of indium leads to a red shift and to a broadening of the emission. It does not have any beneficial effect on [111]B quantum well optical properties.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor quantum wells; 1.5 micron; 111 oriented substrates; Ga(In)AsN/GaAs thick layers; GaAs substrate; GaAs substrates; GaAsN-GaAs; GaAsN/GaAs; GaInAsN-GaAs; GaInAsN/GaAs; N incorporation; broad emission; defects; dilute nitrides; emission wavelengths; growth rate; molecular beam epitaxy; nitrogen incorporation; quantum well optical properties; red shift; spectral line broadening; substrate orientation;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20030039

Filename

1193697