Isolated emitter AlGaAs/GaAs HBT integrated with emitter-down HI/sup 2/L technology

Author

Plumton, Donald L. ; Chang, C.T.M. ; Woods, B.O.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

Volume

10

Issue

11

fYear

1989

Firstpage

508

Lastpage

510

Abstract

A process that integrates isolated-emitter heterojunction bipolar transistors (HBTs) with common-emitter HBTs in the emitter-down epi structure on n/sup +/ substrates is discussed. Overgrowth of the epi onto a p/sup -/ implanted region results in back-to-back diodes for approximately 12-V vertical isolation. Isolated transistors are used in emitter-follower output buffers for heterojunction injection logic (HI/sup 2/L) ring oscillators, demonstrating the integration of the two transistor types.<>

Keywords

III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; integrated circuit technology; integrated injection logic; AlGaAs-GaAs; HBTs; back-to-back diodes; common-emitter HBTs; emitter-down HI/sup 2/L technology; emitter-follower output buffers; epi overgrowth; heterojunction injection logic; isolated-emitter heterojunction bipolar transistors; n/sup +/ substrates; ring oscillators; transistor integration; vertical isolation; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Implants; Isolation technology; Logic; Ring oscillators; Schottky diodes; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.43119

Filename

43119