• DocumentCode
    1182029
  • Title

    Fabrication of 2-D photonic bandgap structures in GaAs/AlGaAs

  • Author

    Krauss, T. ; Thoms, S. ; Wilkinson, C.D.W. ; DeLaRue, R.M.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Glasgow Univ.
  • Volume
    30
  • Issue
    17
  • fYear
    1994
  • fDate
    8/18/1994 12:00:00 AM
  • Firstpage
    1444
  • Lastpage
    1446
  • Abstract
    The authors report the first realisation of a two-dimensional photonic bandgap structure with a period of λ0/2n in the GaAs/AlGaAs material system. The structure consists of a honeycomb lattice with a wall thickness of ~30 nm and a period of 160 nm. It was found that, to realise patterns of such small size and periodicity, it is crucial to control the shape of the exposed features
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; optical constants; optical waveguides; semiconductor lasers; 2D photonic bandgap structures; GaAs-AlGaAs; GaAs/AlGaAs; exposed features; honeycomb lattice; periodicity; shape control; wall thickness;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940987
  • Filename
    326277
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1182029