DocumentCode
1182643
Title
Proposed GaAs IMPATT device structure for D-band applications
Author
Curow, M.
Author_Institution
Arbeitsbereich Hochfrequenztech., Tech. Univ. Hamburg-Harburg
Volume
30
Issue
19
fYear
1994
fDate
9/15/1994 12:00:00 AM
Firstpage
1629
Lastpage
1631
Abstract
A GaAs double drift IMPATT device structure for applications in D-band is proposed which exhibits high efficiencies at relatively high impedance levels. Computer simulations using a full hydrodynamic transport model with two additional energy balance equations for accurate modelling of impact ionisation show that under realistic thermal considerations, output powers up to 400 mW should be obtainable around 150 GHz
Keywords
III-V semiconductors; IMPATT diodes; gallium arsenide; impact ionisation; semiconductor device models; 150 GHz; 400 mW; D-band applications; GaAs; double drift IMPATT device structure; energy balance equations; full hydrodynamic transport model; impact ionisation; impedance levels; output powers; thermal considerations;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19941097
Filename
326343
Link To Document