• DocumentCode
    1182653
  • Title

    Modified T-gates incorporating micro-airbridges to avoid mesa sidewall contact in AllnAs/GaInAs HEMTs

  • Author

    Patrick, W.

  • Author_Institution
    Lab. for Electromagn. Fields & Microwave Electron., Swiss Federal Inst. of Technol., Zurich
  • Volume
    30
  • Issue
    19
  • fYear
    1994
  • fDate
    9/15/1994 12:00:00 AM
  • Firstpage
    1628
  • Lastpage
    1629
  • Abstract
    A technique for eliminating mesa sidewall contact problems in InP-based HEMTs has been developed. This technique uses T-gates with integrated micro-airbridges which span the critical region at the edge of the mesa avoiding contact between the gate and the mesa sidewall. The airbridges are fabricated by modifying the electron-beam exposure pattern for T-gates
  • Keywords
    III-V semiconductors; aluminium compounds; electron beam lithography; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor technology; AlInAs-GaInAs; AllnAs/GaInAs; HEMTs; T-gates; critical region; electron-beam exposure pattern; integrated micro-airbridges; mesa sidewall contact problems;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941104
  • Filename
    326344
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1182653