Composition fluctuations in GaInNAs multi-quantum wells

Author

Herrera, M. ; González, D. ; García, R. ; Hopkinson, M. ; Navaretti, P. ; Gutiérrez, M. ; Liu, H.Y.

Author_Institution

Dept. de Ciencia de los Mater. e I.M. y Q.I., Univ. de Cadiz, Spain

Volume

151

Issue

5

fYear

2004

Firstpage

271

Lastpage

274

Abstract

GaInNAs/GaAs(001) multi-quantum wells grown by MBE at temperatures in the range 360-460°C have been studied by transmission electron microscopy and photoluminescence. The authors have observed the existence of periodic contrasts with 220BF reflection, which appear more pronounced when increasing the growth temperature. These strain contrasts have been associated to composition fluctuations in the wells and, therefore, it is suggested that an enhancement of the phase separation in the GaInNAs quantum wells occurs when varying the growth temperature from 360°C to 460°C. The photoluminescence results show a broadening of the emission peak over a similar growth temperature range. Thus, the degradation of the optical properties in the GaInNAs structures is suggested to be linked to the composition fluctuations.

Keywords

III-V semiconductors; fluctuations; gallium compounds; indium compounds; molecular beam epitaxial growth; phase separation; photoluminescence; semiconductor quantum wells; transmission electron microscopy; wide band gap semiconductors; 360 to 460 degC; GaInNAs multiquantum wells; GaInNAs-GaAs; MBE; composition fluctuations; phase separation; photoluminescence; strain contrasts; transmission electron microscopy;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20040930

Filename

1367366