Effects of rapid thermal annealing on optical quality of GaNP alloys

Author

Izadifard, M. ; Buyanova, I.A. ; Bergman, J.P. ; Chen, W.M. ; Utsumi, A. ; Furukawa, Y. ; Wakahara, A. ; Yonezu, H.

Author_Institution

Dept. of Phys. & Meas. Technol., Linkoping Univ., Sweden

Volume

151

Issue

5

fYear

2004

Firstpage

335

Lastpage

337

Abstract

Significant improvements in radiative efficiency of GaNP epilayers grown on GaP substrates by solid-source molecular beam epitaxy (MBE) are achieved by post-growth rapid thermal annealing (RTA). From temperature-dependent CW and time-resolved photoluminescence (PL) spectroscopies combined with PL excitation measurements, the observed improvements are attributed to annealing out of competing nonradiative centres. This conclusion is supported by the following experimental evidence: reduced thermal quenching of the PL intensity resulting in a substantial (up to 18 times) increase at room temperature (RT) after RTA, and simultaneous improvements in carrier lifetime at RT deduced from time-resolved PL measurements.

Keywords

III-V semiconductors; carrier lifetime; gallium compounds; molecular beam epitaxial growth; photoluminescence; quenching (thermal); rapid thermal annealing; semiconductor epitaxial layers; time resolved spectra; GaNP; GaNP alloys; GaNP epilayers; GaP; GaP substrates; carrier lifetime; nonradiative centres; optical quality; photoluminescence excitation measurements; rapid thermal annealing; reduced thermal quenching; room temperature; solid-source molecular beam epitaxy; temperature-dependent continuous-wave spectroscopy; time-resolved measurements; time-resolved photoluminescence spectroscopy;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20040872

Filename

1367382