Buried-oxide silicon-on-insulator structures. I. Optical waveguide characteristics

Author

Emmons, Robert M. ; Kurdi, Bülent N. ; Hall, Dennis G.

Author_Institution

Inst. of Opt., Rochester Univ., NY, USA

Volume

28

Issue

1

fYear

1992

fDate

1/1/1992 12:00:00 AM

Firstpage

157

Lastpage

163

Abstract

For pt.II, see ibid., vol.28, no.1, p.164-75 (1992). Buried-oxide silicon-on-insulator structures are analyzed using both a multilayer transfer matrix approach and a simple approximate method. Results show that these structures can support low-loss leaky modes with substrate leakage losses under 1 dB/cm. Even for a reasonably thick silicon film layer, adjacent modes of the same polarization can have loss discriminations as large as 100 dB/cm. Mode effective indexes obtained from experimental grating transmission measurements taken on waveguides fabricated with the SIMOX process agree with the theoretical analysis

Keywords

diffraction gratings; integrated optics; optical losses; optical waveguides; 1 dB; 100 dB; SIMOX process; adjacent modes; approximate method; buried-oxide silicon-on-insulator structures; grating transmission measurements; integrated optics; loss discriminations; low-loss leaky modes; multilayer transfer matrix approach; optical films; optical waveguides; substrate leakage losses; thick silicon film layer; Gratings; Nonhomogeneous media; Optical films; Optical losses; Optical waveguides; Polarization; Semiconductor films; Silicon on insulator technology; Substrates; Transmission line matrix methods;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.119510

Filename

119510