• DocumentCode
    1185268
  • Title

    Integration of InAlGaAs/InGaAs MODFETs on MQW modulators on GaAs substrates

  • Author

    Fan, C. ; Hansen, M.W. ; Esener, S.C. ; Wieder, H.H.

  • Volume
    30
  • Issue
    20
  • fYear
    1994
  • fDate
    9/29/1994 12:00:00 AM
  • Firstpage
    1713
  • Lastpage
    1714
  • Abstract
    An InxAlyGa1-x-y device layer structure that enables the monolithic integration of In0.25Al 0.75As/In0.15Ga0.85As MODFETs and In 0.25Al0.35Ga0.40As/In0.25Ga 0.75As MQW modulators is reported. Current gain cutoff frequencies of 10 GHz are measured for 1 μm gate length MODFETs. MQW modulators operating at 1.05 μm demonstrate 20% transmission modulation for an applied 8 V
  • Keywords
    III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; high electron mobility transistors; indium compounds; integrated optoelectronics; optical modulation; semiconductor quantum wells; 1 micron; 1.05 micron; 10 GHz; 8 V; GaAs; GaAs substrates; In0.25Al0.35Ga0.40As -In0.25Ga0.75As; In0.25Al0.75As-In0.15Ga0.85 As; InAlGaAs/InGaAs MODFETs; MQW modulators; current gain cutoff frequencies; layer structure; monolithic integration; transmission modulation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941128
  • Filename
    328457
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1185268