• DocumentCode
    1186257
  • Title

    Evaluation of SiO2 antifuse in a 3D-OTP memory

  • Author

    Li, Feng ; Yang, Xiaoyu ; Meeks, Albert T. ; Shearer, James T. ; Le, K.Y.

  • Author_Institution
    Matrix Semicond. Inc., Santa Clara, CA, USA
  • Volume
    4
  • Issue
    3
  • fYear
    2004
  • Firstpage
    416
  • Lastpage
    421
  • Abstract
    We have evaluated an antifuse technology used in a novel three-dimensional one-time-programmable (3D-OTP) nonvolatile solid-state memory. The 3D-OTP memory uses deposited polysilicon antifuse sandwiches to build its memory cells. The polysilicon based SiO2 antifuse show different breakdown characteristics compared to conventional traditional gate oxides. Long-term storage tests show that this 3D-OTP solid-state memory not only can be a general purpose ROM, but also can be an ideal media for archiving.
  • Keywords
    integrated circuit testing; integrated memory circuits; programmable circuits; silicon compounds; 3D memory; 3D one-time-programmable nonvolatile solid-state memory; SiO2; antifuse technology; archival media; long-term storage tests; memory cells; oxide breakdown; polysilicon antifuse sandwiches; CMOS memory circuits; Electric breakdown; Fabrication; Nonvolatile memory; Paper technology; Read only memory; Semiconductor diodes; Silicon; Solid state circuits; Testing;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2004.837118
  • Filename
    1369203
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1186257