• DocumentCode
    1186269
  • Title

    Highly reliable operation of indium tin oxide AlGaInP orange light-emitting diodes

  • Author

    Lin, Jen-Fin ; Wu, Meng-Chyi ; Chang, C.-M. ; Lee, B.-J. ; Tsai, Yu-Ting

  • Author_Institution
    Res. Inst. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu
  • Volume
    30
  • Issue
    21
  • fYear
    1994
  • fDate
    10/13/1994 12:00:00 AM
  • Firstpage
    1793
  • Lastpage
    1794
  • Abstract
    Indium-tin oxide (ITO) transparent conducting films with a low resistivity of 2-3×104 Ω·cm have been introduced as a window layer in (Al0.7Ga0.3)0.5In0.5P/(Al 0.1Ga0.9)0.5 In0.5P double-heterostructure orange light-emitting diodes to obtain a uniform spatial distribution of the emission light, a good device performance and high reliability. An output power of 450 μW at 20 mA corresponding to an external quantum efficiency of 1.1% for the 620 nm emission can be achieved
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; optical windows; reliability; tin compounds; (Al0.7Ga0.3)0.5In0.5P -(Al0.1Ga0.9)0.5In0.5P; 1.1 percent; 20 mA; 450 muW; 620 nm; AlGaInP; ITO; ITO transparent conducting films; InSnO; double-heterostructure orange light-emitting diodes; external quantum efficiency; output power; reliability; resistivity; spatial light distribution; window layer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941228
  • Filename
    328569
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1186269