External Compensation of Nonuniform Electrical Characteristics of Thin-Film Transistors and Degradation of OLED Devices in AMOLED Displays

Author

In, Hai-Jung ; Kwon, Oh-Kyong

Author_Institution

Dept. of Electron. Comput. Eng., Hanyang Univ., Seoul

Volume

30

Issue

4

fYear

2009

fDate

4/1/2009 12:00:00 AM

Firstpage

377

Lastpage

379

Abstract

The variation of electrical characteristics of polycrystalline-silicon thin-film transistor (TFT) and degradation of organic light-emitting-diode (OLED) device cause nonuniform intensity of luminance and image sticking in active-matrix OLED (AMOLED) displays. An external compensation method that senses and compensates variations of threshold voltage and mobility of TFTs and degradation of OLED device is proposed. The effect of the external compensation method on AMOLED pixel is experimentally verified by measuring the luminance of OLEDs and the electrical characteristics of TFTs in AMOLED pixels.

Keywords

LED displays; brightness; compensation; elemental semiconductors; organic light emitting diodes; semiconductor thin films; silicon; thin film transistors; Si; active-matrix OLED displays; external compensation method; image sticking; luminance intensity; organic light-emitting-diode device; polycrystalline-silicon thin-film transistor; threshold voltage; Degradation; external compensation; organic light-emitting diode (OLED); polycrystalline-silicon thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2014885

Filename

4798189