Effect of Dielectric Thickness on Power Performance of AlGaN/GaN HEMTs

Author

Pei, Yi ; Rajan, Siddharth ; Higashiwaki, Masataka ; Chen, Zhen ; DenBaars, Steven P. ; Mishra, SiddharthUmesh K.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA

Volume

30

Issue

4

fYear

2009

fDate

4/1/2009 12:00:00 AM

Firstpage

313

Lastpage

315

Abstract

The effect of SiN_x passivation thickness on the power performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) has been studied. A model is proposed to explain the surface-state dispersion and passivation of AlGaN/GaN HEMTs. Based on this model, a multidielectric passivation method has been proposed and demonstrated to both provide lower dielectric capacitance and help remove dc-RF dispersion.

Keywords

III-V semiconductors; aluminium compounds; dielectric materials; gallium compounds; high electron mobility transistors; passivation; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; HEMT; SiN; dc-RF dispersion; dielectric capacitance; dielectric thickness; high-electron-mobility transistors; multidielectric passivation method; power added efficiency; power performance; surface-state dispersion; Dielectric; gallium nitride; high-electron-mobility transistors (HEMTs); passivation; power; power-added efficiency (PAE);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2012444

Filename

4798193