DC characteristics of dual gated large area graphene MOSFET

Author

Rahman, M.T. ; Roy, Anil K. ; Bhuiyan, Hossain Md Abu Reza ; Islam, Mohammad Tariqul ; Bhuiyan, A.G.

Author_Institution

Khulna Univ. of Eng. & Technol., Khulna, Bangladesh

fYear

2014

fDate

13-15 Feb. 2014

Firstpage

1

Lastpage

6

Abstract

This work reports the DC characteristics of dual gated large area graphene metal oxide semiconductor field effect transistor (MOSFET). The sheet charge density dependent quantum capacitance is obtained self-consistently with considering the impurities concentration of the gate oxide layer. The potential profile as well as sheet charge density of graphene channel is calculated. The C-V and I-V characteristics are illustrated here. Finally, the velocity-field relation is shown.

Keywords

MOSFET; capacitance; graphene; C-V characteristics; DC characteristics; I-V characteristics; dual gated large area graphene MOSFET; gate oxide layer; graphene channel; metal oxide semiconductor field effect transistor; quantum capacitance; sheet charge density; velocity-field relation; Electric potential; Graphene; Impurities; Logic gates; MOSFET; Quantum capacitance; GFET; Graphene MOSFET; Large area graphene; dual gate effects; self-consistent quantum capacitance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Information and Communication Technology (EICT), 2013 International Conference on

Conference_Location

Khulna

Print_ISBN

978-1-4799-2297-0

Type

conf

DOI

10.1109/EICT.2014.6777909

Filename

6777909