DocumentCode
1187442
Title
Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short period superlattice tunneling contact layer
Author
Kuo, C.H. ; Chang, S.J. ; Su, Y.K. ; Wu, L.W. ; Chen, J.F. ; Sheu, J.K. ; Tsai, J.M.
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume
50
Issue
2
fYear
2003
Firstpage
535
Lastpage
537
Abstract
The electrical properties of Si-doped n+-In0.23Ga0.77N/GaN SPS structure were investigated and compared with conventional Mg-doped GaN contact layer. Temperature dependent Hall measurement showed that such a SPS structure exhibits a high sheet electron concentration. It was found that we could reduce the 20 mA LED forward voltage from 3.78 V to 2.94 V and also reduce the series resistance of the LED from 41 Ω to 10 Ω by introducing such an n+-InGaN/GaN SPS top contact. It was also found that we could improve the LED lifetime by such a SPS structure.
Keywords
III-V semiconductors; elemental semiconductors; gallium compounds; indium compounds; light emitting diodes; semiconductor device reliability; semiconductor superlattices; silicon; wide band gap semiconductors; 10 ohm; 2.94 V; 20 mA; In0.23Ga0.77N:Si-GaN; In0.23Ga0.77N:Si/GaN; LED forward voltage; SPS; lifetime; light emitting diodes; series resistance; sheet electron concentration; short period superlattice; temperature dependent Hall measurement; tunneling contact layer; Contact resistance; Electrical resistance measurement; Gallium nitride; Ionization; Laser sintering; Light emitting diodes; Superlattices; Temperature measurement; Tunneling; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2003.809435
Filename
1196107
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