Mobility enhancement

Author

Mohta, Nidhi ; Thompson, Scott E.

Author_Institution

Florida Univ., Gainesville, FL, USA

Volume

21

Issue

5

fYear

2005

Firstpage

18

Lastpage

23

Abstract

This article is targeted as an introduction to the physics of strained Si and the current state of the art in uniaxial strained Si MOSFET. The first part of the article explains how strain alters the valence and conduction band of Si as well as scattering rates. This is followed by a review of state-of-the-art strained techniques being implemented in 90- and 65-nm process technologies. Finally, we conclude with a discussion of the future scalability of strained Si MOSFETs in the ballistic regime and nanoscale CMOS.

Keywords

CMOS integrated circuits; Ge-Si alloys; MOSFET; ballistic transport; carrier mobility; conduction bands; elemental semiconductors; nanoelectronics; silicon; stress effects; valence bands; 65 nm; 90 nm; Si; SiGe; ballistic regime; conduction bands; mobility enhancement; nanoscale CMOS; scattering rate; strained silicon; uniaxial strained MOSFET; valence bands; Capacitive sensors; Charge carrier processes; Compressive stress; Conductivity; Effective mass; Electron mobility; Light scattering; Scattering parameters; Temperature; Tensile stress;

fLanguage

English

Journal_Title

Circuits and Devices Magazine, IEEE

Publisher

ieee

ISSN

8755-3996

Type

jour

DOI

10.1109/MCD.2005.1517386

Filename

1517386