Ultrafast optoelectronic sample-and-hold using low-temperature-grown GaAs MSM

Author

Urata, Ryohei ; Takahashi, Ryo ; Sabnis, Vijit A. ; Miller, David A B ; Harris, James S., Jr.

Author_Institution

Dept. of Electr. Eng., Stanford Univ., CA, USA

Volume

15

Issue

5

fYear

2003

fDate

5/1/2003 12:00:00 AM

Firstpage

724

Lastpage

726

Abstract

We demonstrate 20-GHz input bandwidth of an optoelectronic sample-and-hold circuit using optically triggered metal-semiconductor-metal switches made of low-temperature-grown GaAs. Linearity /spl ges/4 effective-number-of-bits and an estimated 3-dB bandwidth of up to /spl sim/63 GHz are observed for the sample-and-hold process, making the device a potential candidate for moderate resolution, high-speed sampling applications.

Keywords

III-V semiconductors; analogue-digital conversion; gallium arsenide; high-speed optical techniques; integrated optoelectronics; metal-semiconductor-metal structures; photoconducting switches; sample and hold circuits; signal sampling; 20 GHz; 250 pJ; 3-dB bandwidth; 63 GHz; GaAs; analog-to-digital converter; input bandwidth; linearity; low-temperature-grown GaAs MSM; moderate resolution high-speed sampling; optical data processing; optical switching energy; optically triggered metal-semiconductor-metal switches; optoelectronic sample-and-hold circuit; time-resolved electrooptic sampling; ultrafast optoelectronic sample-and-hold; Bandwidth; Capacitors; Circuits; Gallium arsenide; High speed optical techniques; Optical sensors; Optical switches; Photonics; Sampling methods; Ultrafast optics;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2003.810252

Filename

1196149