Effect of heat sink on electromigration lifetime of Ni thin film

Thermal design and thermal management are the key issues for electronic products during the trend of miniaturization. Heat sink is one of the promising and popular choices to relieve the thermal problem. In this paper, the effect of heat sink on electromigration (EM) lifetime of Ni thin films is investigated. It is proved that heat sink had no influence on the temperature coefficient of resistance (TCR), but could reduce the temperature rise (TR) and raise the breakdown voltage efficiently. The failure data with time obtained by the accelerated lifetime test were analyzed by ALTA software based on the Temperature-Non Thermal (T-NT) lognormal model. The maximum allowable voltage under the service condition could be obtained based on 5 years lifetime and 100% duty cycle with 0.05% cumulative distribution function (CDF). In summary, heat sink could obviously improve the EM lifetime of Ni thin film due to its excellent heat dissipation ability.